Copper cables, traditionally used for short-distance intra-rack interconnects in data centres, are increasingly facing challenges in both transmission density and energy efficiency.
Researchers from the University of Science and Technology of China (USTC) and collaborators have manufactured a high-performance normally-off diamond p-FET featuring high-density 2D hole gas (HG) with ...
Rohm will integrate its own development and manufacturing technologies for GaN power devices with the process technology of ...
Samco has announced that its plasma etching system, the RIE-400iP, has been selected by the Technical University of Denmark ...
IFW Dresden is developing innovative chemistries for a variety of new semiconductor device categories. Selecting the Agnitron ...
The research 'Impact of Contact Gating on Scaling of Monolayer 2D Transistors Using a Symmetric Dual-Gate Structure' appeared ...
The UK Semiconductor Industry Future Skills (UK-SIFS) CDT will be led by Swansea University’s Centre for Integrative ...
Efficient Power Conversion (EPC) has released the EPC91122, a 3-phase BLDC motor drive inverter evaluation board engineered ...
Toptica Photonics is a commercial member of the US Department of War’s (previously DoD) NORDTECH Hub. BluGlass is supporting ...
The report says that despite short-term pricing pressure in certain segments, electrification, AI infrastructure expansion, and next-generation connectivity are reinforcing long-term demand for ...
A team from China has strengthened the case for manufacturing GaN HEMTs by plasma-assisted MBE by producing simple devices that can block more than 2.5 kV. While MOCVD dominates the manufacture of GaN ...
“The big thing with lasers is that they start having thermal issues at relatively low temperatures,” Chao said. “MicroLEDs ...
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