GaN and SiC enable engineers to design and scale power systems to meet the stringent requirements of modern automated factories. Power designs for factory automation face several challenges, such as ...

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Overcoming Challenges in the Epitaxial Growth and Manufacturing of GaN Films In an interview with Power Electronics News, Shyh-Chiang Shen, Director of GaN Program Development Division at VIS, ...

Silicon Carbide (SiC) has challenging opportunities in the semiconductor and power electronics industry for multiple applications such as electric vehicles, renewable energies, and others. Silicon ...

2024 has been a crucial year for the power electronics sector in terms of development, preparing for radical changes in 2025 and beyond. 2024 has been a crucial year for the power electronics sector ...

This article provides an interesting overview of the top books on wide bandgap technologies. From electrification to smart grids, power electronics is used in a wide variety of crucial applications.

The number of products needing charging is increasing, and so is the need for fast-charging, high-capacity batteries. Over the past decade, wireless power transfer functionality has been broadly ...

GaN transistors are significantly faster and smaller than silicon MOSFETs. GaN switching devices are available in two different types. Silicon power MOSFETs have not kept pace with the evolutionary ...

This article describes how to design a simple class D power amplifier using the High Voltage GreenPAK™ IC. A class D amplifier operates by deriving a two-state signal from a continuous control signal ...

Wide bandgap (WBG) semiconductors, such as SiC and GaN, offer important advantages in terms of reliability, energy efficiency, power density, and cost reduction. Power electronics is evolving day by ...

In sensorless control systems, the magnetic angle of the motor is estimated from the motor phase voltages and currents. Its position is determined by monitoring certain electrical parameters of the ...

While the failure mechanisms in gallium nitride (GaN) high electron mobility transistors (HEMTs) have been widely studied and significant improvements made in their reliability, this field is still ...